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使用 CO2 、O2 氧源得到了 Zn O择优取向薄膜样品 ,实验证实了小尺寸的交流高压离化器件确实能够为低压金属有机物化学气相沉积 (L P- MOCVD)生长 Zn O薄膜提供有效的离化氧源支持 .运用电晕放电模型和 Zn O薄膜台阶生长模型研究了离化效率对电压、气压和不同氧源气体的依赖关系及负氧浓度对生长速率和薄膜质量的影响 .对 X射线衍射谱、光致发光谱、原子力显微镜和俄歇电子能谱的分析表明 ,CO2 氧源由于离化效率较高 ,负氧浓度较大 ,使得生长速率较慢 ,薄膜表面较为平坦 ,但表面 C污染影响了薄膜内部质量 ;而 O2 氧源样品取向更接近(0 0 0 2 )衬底取向 ,样品内部应力较小 ,晶格常数更接近正常化学配比的 Zn O单晶 ,这表明最优负氧浓度的存在和气源带来的污染是 Zn O生长中必须考虑的问题 .
The results show that the small size AC high pressure ionization device can indeed provide effective ionization for low-pressure metal-organic chemical vapor deposition (L-MOCVD) growth of Zn O thin films. Oxygen source support.The dependence of ionization efficiency on voltage, pressure and different oxygen source gases and the effect of negative oxygen concentration on the growth rate and film quality were studied by corona discharge model and Zn O film step growth model.For X-ray diffraction Spectroscopy, photoluminescence spectroscopy, atomic force microscopy and Auger electron spectroscopy analysis showed that CO2 source due to higher ionization efficiency, negative oxygen concentration larger, making the growth rate is slower, the film surface is relatively flat, but the surface C pollution Which affected the internal quality of the thin film. However, the orientation of the O2 source sample was closer to the (0 0 0 2) orientation of the substrate, the internal stress of the sample was smaller and the lattice constant was closer to that of the normal chemical ratio ZnO single crystal, The presence of oxygen concentration and the pollution caused by the gas source are issues that must be considered in the growth of ZnO.