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制备了以聚苯乙烯磺酸(PSSH)为上下界面层的聚(偏氟乙烯)(PVDF)二元共聚物聚(偏氟乙烯-三氟乙烯)[P(VDF-TrFE)]及聚(偏氟乙烯-氯氟乙烯)[P(VDF-CTFE)]的三明治结构电容器,研究了P(VDF-TrFE)和P(VDF-CTFE)2两种共聚物薄膜的铁电性能和电容特性。结果表明,厚度为60nm的Ti/PSSH/P(VDF-TrFE)/PSSH/Ti超薄薄膜表现出优异的铁电性能;而厚度为100nm的Ti/PSSH/P(VDF-CTFE)/PSSH/Ti薄膜表现出较好的电容特性,存储能量密度高达60J/cm3。研究结果为其在电子器件上的应用提供理论指导。
Poly (vinylidene fluoride) (PVDF) binary copolymer poly (vinylidene fluoride-trifluoroethylene) [P (VDF-TrFE)] with polystyrenesulfonic acid (PSSH) Ferroelectric properties and capacitance characteristics of two kinds of copolymer films of P (VDF-TrFE) and P (VDF-CTFE) 2 were studied. The results show that the thin film of Ti / PSSH / P (VDF-TrFE) / PSSH / Ti with a thickness of 60 nm exhibits excellent ferroelectric properties. The thickness of Ti / PSSH / P Ti film shows better capacitance characteristics, storage energy density up to 60J / cm3. The results provide theoretical guidance for its application in electronic devices.