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提出了一种硅锗异质结双极型晶体管(SiGe HBT)非准静态效应的小信号等效电路模型的参数提取方法。整个参数提取过程建立在由非准态效应的小信号等效电路推导出的一系列泰勒级数解析公式并结合参数直接法,该方法依赖于测量的S参数,不使用任何的数值优化法,参数提取结果使用CAD仿真验证。结果表明该参数提取方法简单易行,较为精确,该方法能够用到不同工艺SiGe HBT参数提取。
A parameter extraction method for small signal equivalent circuit model of non-quasi-static effect of SiGe HBT is proposed. The whole parameter extraction process is based on a series of Taylor series analytical formulas derived from the small-signal equivalent circuit of non-quasi-state effect combined with the parametric direct method. The method relies on the measured S-parameters and does not use any numerical optimization method. Parameter extraction results using CAD simulation verification. The results show that the extraction method is simple and accurate, and the method can extract SiGe HBT parameters from different processes.