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,Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell
【作 者】
：
【机 构】
：
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beij
【出 处】
：
中国物理快报（英文版）
【发表日期】
：
2011年1期
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