论文部分内容阅读
传统的紫外纳米压印(UV-NIL)虽然不受曝光波长的限制,但是存在气泡残留、压印不均匀、模具寿命短等问题。为解决这些问题产生了各种新型UV-NIL工艺,针对这些工艺阐述了紫外纳米压印技术工艺要素的最新研究进展,包括模具、光刻胶的材料与制备技术的现状,并列举了步进-闪光压印光刻(S-FIL)、卷对卷式紫外纳米压印光刻(R2R-NIL)等工艺的流程及其特点。紫外纳米压印的图形质量目前仍受光刻胶填充、固化、脱模等物理行为影响。结合最近的实验研究,从理论方面概述了紫外纳米压印的基本原理,主要指出了光刻胶流动行为以及模具降解等问题。最后介绍了一些紫外纳米压印技术的尖端应用。
Traditional UV nano-imprinting (UV-NIL) is not limited by the exposure wavelength, but there are problems such as residual bubbles, uneven imprinting and short mold life. In order to solve these problems, a variety of new UV-NIL processes have been developed. The latest research progress on the technological elements of UV nanoimprint technology is elaborated for these processes, including the current status of mold and photoresist materials and preparation technologies, - Flash imprint lithography (S-FIL), roll-to-roll UV nanoimprint lithography (R2R-NIL) process flow and its characteristics. UV nanoimprint graphics quality is still affected by the photoresist filling, curing, mold release and other physical behavior. Combined with the recent experimental research, the basic principle of UV nanoimprint is summarized theoretically, and the problems of photoresist flow behavior and mold degradation are mainly pointed out. Finally, some of the cutting-edge applications of UV nanoimprint technology are introduced.