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以类单晶硅和铸锭多晶硅为研究对象,综合分析其红外(IR)图、光致发光(PL)图、间隙铁(Fei)浓度、少子寿命及电学性能特征。结果表明:相对于铸锭多晶硅,类单晶硅的晶粒尺寸大,晶界和位错少,间隙铁浓度低,少子寿命和电池效率高,晶体质量优于铸锭多晶硅。
In this paper, monocrystalline silicon and ingot polycrystalline silicon were selected as the research objects, the infrared (IR) spectra, photoluminescence (PL) patterns, interstitial iron concentration, minority lifetime and electrical properties were analyzed comprehensively. The results show that, compared with the ingot polycrystalline silicon, the single crystal silicon has the advantages of large grain size, few grain boundaries and dislocations, low interstitial iron concentration, low minority lifetime and high cell efficiency, and the crystal quality is better than the ingot polycrystalline silicon.