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本文通过恒定应力加速实验对GaN微波单片集成电路中SiN介质MIM电容的可靠性进行了评估,研究了高场下MIM电容的两种失效模式、临界介质击穿电荷密度以及平均失效前时间.通过不同温度下介质电容的导电特性求解了介质内的缺陷能级.重点分析了SiN介质MIM电容的退化机理,研究认为高应力下介质内产生新的施主型缺陷,并占据主导地位,其缺陷能级逐渐向深能级转移;缺陷的持续增加加剧了介质内载流子的散射,导致应力后期泄漏电流降低.SiN介质MIM电容退化机理的研究为加固介质电容提供了依据.
In this paper, the reliability of SiN MIM capacitors in GaN microwave monolithic integrated circuits is evaluated by constant stress acceleration experiments. Two failure modes of MIM capacitors in high field, the critical dielectric breakdown charge density and the average pre-failure time are studied. The defect level in the medium is solved by the conductivity of the dielectric capacitor at different temperatures. The degradation mechanism of the MIM capacitor in SiN dielectric is analyzed emphatically. It is considered that the new donor-type defect occurs in the medium under high stress and takes the leading position. The energy level gradually shifts to the deep level, and the continuous increase of defects aggravates the scattering of carriers in the medium, resulting in the decrease of the leakage current at the late stage of stress.The study on the degradation mechanism of MIM capacitor in SiN dielectric provides the basis for strengthening dielectric capacitance.