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讨论了用ＣＡＭＥＣＡＩＭＳ－４ｆ型二次离子质谱仪对ＡｌｘＧａ１－ｘＡｓ复杂多层结构定量深度分析的方法。采用ＣｓＭ＋技术，完成了无外部参考物质ＡｌｘＧａ１－ｘＡｓ基体成分定量分析，提出并实验验证了一种新的变溅射速率深度校准方法，详细讨论了复杂基体中对杂质进行定量分析时二次离子类型的选择，还尝试了在缺乏足够参考物质时杂质含量的实验估算。实现了二次离子质谱（ＳＩＭＳ）对复杂多层结构的定量分析，同时得到了主成分和杂质的定量深度分布，并保持了ＳＩＭＳ的优良深度分辨本领。
The method of quantitative depth analysis of AlxGa1-xAs complex multilayer structure with CAMECAIMS-4f type secondary ion mass spectrometer is discussed. The quantitative analysis of AlxGa1-xAs matrix without external reference material was completed by CsM + technology. A new method of depth calibration of variable sputtering rate was proposed and validated. The secondary ions The type of choice was also experimented with experimental estimates of impurity content in the absence of sufficient reference material. The quantitative analysis of complex multi-layer structure by SIMS has been realized. At the same time, the quantitative depth distribution of principal components and impurities has been obtained, and the excellent depth resolution of SIMS has been maintained.