论文部分内容阅读
利用多靶磁控溅射系统制备了一系列坡莫合金薄膜样品Ta(4 nm)/ZnO(t)/Ni81Fe19(20 nm)/ZnO(t)/Ta(3nm),研究了ZnO插层厚度、基片温度对坡莫合金薄膜各向异性磁电阻(AMR)和微结构的影响。利用四探针法测量薄膜样品的AMR值,利用X射线衍射仪分析样品的微结构。结果表明:由于ZnO插层的“镜面反射”作用,选择适当厚度的ZnO插层能够大幅度提高坡莫合金薄膜AMR值,对于厚度为20 nm的Ni81Fe19薄膜,在基片温度为400℃时,通过插入2 nm厚的ZnO插层使得AMR值较不加插层提高了11%。
A series of samples of permalloy film, Ta (4 nm) / ZnO (t) / Ni81Fe19 (20 nm) / ZnO (t) / Ta (3 nm) were prepared by using multi-target magnetron sputtering system. , Substrate temperature on permalloy anisotropic resistance (AMR) and microstructure. The AMR of the film samples was measured by the four-probe method and the microstructure of the samples was analyzed by X-ray diffraction. The results show that, due to the “specular reflection” effect of ZnO intercalation, the appropriate thickness of ZnO intercalation can greatly improve the permalloy film AMR value, for the Ni81Fe19 film with a thickness of 20 nm, the substrate temperature is 400 ℃ , The AMR value increased by 11% compared with no intercalation by inserting 2 nm thick ZnO intercalation.