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本文研究了穿通结构半导体二极管在低场工作条件下(即恒定迁移率)的两端阻抗特性。研究结果表明,采用交流电理论的复数方法,能够得到直观的分析。本文描述了各种工作模型:空间电荷限制注入型、发射限制注入型和势垒限制注入型。在三种情况下都得到负阻,这是由于空间电荷波在器件内传播时与该点的电场反了位相。当使用低迁移率的材料时,电流的相位延迟增加,因而增加了负阻效应。对典型的硅器件,计算了串联电阻、串联电容与频率、偏流的关系。对于低场结构而言,负阻的有效值较小,因而不能得到实际的应用。但无论如何,本文的分析有助于理解高场结构的工作机理,而这样的高场结构器件(诸如穿通渡越时间二极管或BARlTT二极管)在微波系统中已有实际使用价值。
In this paper, the impedance characteristics of both ends of the through-structure semiconductor diode under low-field operating conditions (ie, constant mobility) are studied. The results show that the use of AC theory of complex methods, can be intuitive analysis. This article describes various working models: space charge limited injection, emission limited injection, and barrier limited injection. Negative resistance is obtained in all three cases because the space charge wave propagates in the device with the opposite phase of the electric field at that point. When low-mobility materials are used, the phase delay of the current increases, thereby adding a negative resistance effect. For a typical silicon device, the relationship between series resistance, series capacitance and frequency and bias current is calculated. For the low-field structure, the effective value of negative resistance is small, and therefore can not be practical application. However, the analysis in this paper helps to understand the working mechanism of high-field structure, and such high-field structure devices such as punch-through diodes or BARlTT diodes have practical value in microwave systems.