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采用磁控溅射法分别制备了不同组分的Mn-Co-Ni-O(MCNO)薄膜材料.通过对材料结构分析,发现在Mn离子数目不变的情况下,随着Co离子的增加,晶粒尺寸逐渐增大,且晶格常数先增大后减小;在Co离子数目不变的情况下,随着Mn离子的增加,薄膜的择优生长晶面由(311)不晶面向(400)晶面转变.对电学性能测试进行分析,可知薄膜材料既有Mn离子的导电机制,也有Co离子的导电机制;Mn_(1.2)Co_(1.5)Ni_(0.3)O_4具有最低的电阻率(235Ω·cm),具有最高的室温负温度电阻系数︱α295︱(4.7%·K~(-1))值.
Mn-Co-Ni-O (MCNO) thin films with different compositions were prepared by magnetron sputtering method.According to the analysis of material structure, it was found that with the increase of Co ions with the same number of Mn ions, The grain size increases and the lattice constant first increases and then decreases. When the number of Co ions is constant, the preferred growth crystal plane of the film increases from (311) to (400) with the increase of Mn ions ) Facet transition.Analysis of the electrical performance test shows that the film material has both the conductive mechanism of Mn ions and the conductive mechanism of Co ions.The Mn1.2Co1.5Ni0.3O4 has the lowest resistivity · Cm), with the highest room temperature negative temperature coefficient of resistance ︱ α295︱ (4.7% · K ~ (-1)) value.