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In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21 Sb0.79 bulk materials and InAs/GaSb type-Ⅱ supedattices with cutoff wavelengths of 2.2 μm and 3.6 μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42％ and a dark current density of 5.93 × 10-5 A/cm2 at 500 mV,thereby providing a detectivity of 1.55 × 1011 cm.Hz1/2/W.The mid-wave channel exhibits a peak quantum efficiency of 31％ and a dark current density of 1.22 × 10-3 A/cm2 at-300 mV,thereby resulting in a detectivity of 2.71 × 1010 cm.Hz1/2/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.