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This paper presents a 10-GHz 8-bit direct digital synthesizer(DDS) microwave monolithic integrated circuit implemented in 1μm GaAs HBT technology.The DDS takes a double-edge-trigger(DET) 8-stage pipeline accumulator with sine-weighted DAC-based ROM-less architecture,which can maximize the utilization ratio of the GaAs HBT’s high-speed potential.With an output frequency up to 5 GHz,the DDS gives an average spurious free dynamic range of 23.24 dBc through the first Nyquist band,and consumes 2.4 W of DC power from a single-4.6 VDC supply.Using 1651 GaAs HBT transistors,the total area of the DDS chip is 2.4×2.0 mm~2.
This paper presents a 10-GHz 8-bit direct digital synthesizer (DDS) microwave monolithic integrated circuit implemented in 1 μm GaAs HBT technology. The DDS takes a double-edge-trigger (DET) based ROM-less architecture, which can maximize the utilization ratio of the GaAs HBT’s high-speed potential. Since an output frequency up to 5 GHz, the DDS gives an average spurious free dynamic range of 23.24 dBc through the first Nyquist band, and consumes 2.4 W of DC power from a single-4.6 VDC supply. Using 1651 GaAs HBT transistors, the total area of the DDS chip is 2.4 × 2.0 mm ~ 2.