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研究了真空蒸镀制备的玻璃基底上的ＮｉＴｉ薄膜的特性，并进行了成分分析、Ｘ射线衍射分析、电阻经时变化及电阻－温度特性测定结果表明：真空蒸镀所得的ＮｉＴｉ膜中Ｔｉ的物质的量分数比蒸发源镀材降低约００７；基底温度低于３５０℃时，ＮｉＴｉ膜的电阻－温度曲线呈线性变化；采用镀后热处理，可使ＮｉＴｉ膜晶化，且出现Ｒ相变同时，ＮｉＴｉ膜相变温度、相变量，电阻经时变化特性与基底温度及热处理工艺有关
The properties of NiTi thin films on glass substrates prepared by vacuum evaporation were investigated. The properties of NiTi thin films were analyzed by elemental analysis, X-ray diffraction analysis, resistance changes over time and resistance-temperature characteristics. The results show that the Ti Of the NiTi films decreased by about 007 compared with those of the evaporation sources. When the substrate temperature was lower than 350 ℃, the resistance-temperature curve of the NiTi films changed linearly. After the NiTi films were annealed, the NiTi films were crystallized and the R At the same time, the phase transformation temperature, the phase change and the resistance change over time of NiTi film are related to the substrate temperature and the heat treatment process