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采用直流磁控溅射工艺于200℃的玻璃基板制备了大面积AZO透明导电薄膜。重点研究了样品晶体结构、方阻、可见光透过率、样品形貌等随其位置变化的情况。研究表明,大面积AZO薄膜的晶体结构、可见光透过率、样品形貌等随样品位置变化比较小,大面积AZO样品均按C轴取向生长,表面平整,晶粒尺寸为20 nm左右。在本实验条件下获得的大面积AZO薄膜方阻在86～110Ω/□范围内,方阻线性变动率为28%,样品电阻率为6.34～7.26×10-4Ω·cm,可见光平均透过率均高于87%。
A large area AZO transparent conductive film was prepared on a glass substrate with DC magnetron sputtering at 200 ℃. Focus on the sample crystal structure, square resistance, visible light transmittance, the shape of the sample with its position changes. The results show that the crystal structure, visible light transmittance and sample morphology of the large area AZO thin films change little with the sample position. The large area AZO films grow with a C axis orientation with a smooth surface and a grain size of about 20 nm. The square resistance of large area AZO film obtained in this experiment is within the range of 86-110Ω / □, the square resistance linear change rate is 28% and the sample resistivity is 6.34-7.26 × 10-4Ω · cm. The average visible light transmittance Higher than 87%.