采用动力学蒙特卡罗模型模拟了沉积速率和生长停顿对GaAs衬底中垂直耦合InAs量子点超晶格生长早期阶段的影响.通过对生长表面形态、岛平均尺寸、岛尺寸分布及其标准差等方面的研究,发现综合控制沉积速率和生长停顿时间能够得到大小均匀、排列有序的岛阵列.这对后续量子点超晶格生长过程中量子点的定位有重要影响. The effects of deposition rate and growth rate on the growth of vertically coupled InAs quantum dots superlattices in GaAs substrates were simulated using the kinetic Monte Carlo model. The growth surface morphology, island size, island size distribution and its standard deviation We find that island arrays with uniform size and orderly distribution can be obtained by comprehensively controlling the deposition rate and growth pause time, which has an important influence on the location of quantum dots in the subsequent quantum lattice superlattice growth.