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实验使用脉冲激光熔蚀金属铝靶，使溅射的物质粒子和真空室中的氮气反应以淀积氮化铝（ＡｌＮ）薄膜，淀积时引入氮气直流放电以促使Ａｌ和Ｎ发生完全反应制备高质量符合化学计量比的ＡｌＮ薄膜。讨论了脉冲能量密度、基底温度、气体放电对所沉积薄膜组织结构的影响。实验结果表明，当ＤＥ＝１．０Ｊ·ｃｍ－２，ＰＮ２＝１３．３３３ｋＰａ，Ｔｓｕｂ＝２００℃，Ｖ＝６５０Ｖ，ｆ＝５Ｈｚ，ｄＳ－Ｔ＝４ｃｍ时，高质量的ＡｌＮ薄膜被成功地沉积于Ｓｉ（１００）基片上。分析表明薄膜是具有高取向性的ＡｌＮ（１００）多晶膜，薄膜的能带间隙约为６．２ｅＶ，其电阻率和击穿电场分别为２×１０１３Ω·ｃｍ和３×１０６Ｖ·ｃｍ－１。
The experiment used a pulsed laser to etch an aluminum target to react the sputtered material particles with the nitrogen in the vacuum chamber to deposit an aluminum nitride (AlN) thin film. During the deposition, a direct current (DC) discharge of nitrogen was introduced to promote the complete reaction between Al and N High quality stoichiometric AlN films. The effects of pulse energy density, substrate temperature and gas discharge on the microstructure of deposited films were discussed. The experimental results show that high quality AlN films were successfully deposited at DE = 1.0 J · cm -2, PN 2 = 13.333 kPa, Tsub = 200 ° C, V = 650 V, f = 5 Hz and dS-T = On Si (100) substrate. The analysis shows that the film is AlN (100) polycrystalline film with high orientation. The band gap of the film is about 6.2eV and its resistivity and breakdown electric field are 2 × 1013Ω · cm and 3 × 106V · cm-1 respectively .