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引入晶粒边界修正，改进了Ｍｏ２Ｃ膜表面粗糙化物理模型，将ＤＴ２模型推广到包括有温度的情况，对Ｍｏ２Ｃ膜表面形态进行计算机模拟并统计模拟图的高度分布，确定表面粗糙度随沉积时间和基底温度的变化规律。结果表明：引入晶粒边界修正大大促进了理论与实验结果的一致， Ｍｏ２Ｃ膜表面粗糙化属快速粗造化，粗造度随基底温度升高而非线性地增大。
The grain boundary modification was introduced to improve the physical model of Mo2C film surface roughness. The DT2 model was generalized to include the temperature. The surface morphology of Mo2C film was simulated by computer and the height distribution of the simulated image was calculated. The surface roughness was determined with the deposition time And substrate temperature changes. The results show that the introduction of grain boundary modification greatly promotes the agreement between the theoretical and experimental results. The surface roughening of Mo2C film is rapid roughing, and the coarseness increases non-linearly with the substrate temperature increasing.