日本电气公司研制出一种高速 GaAs 场效应管,开关速度至少比常温下的一般场效应管快一倍,互导率为602mS/mm~2,放大率是现有场效应管的三倍。此器件的中央电极用 GaAs 作衬底来减小阻抗,中央电极为自对准门结构。在硅化钨栅极的壁上有一层氧化硅绝缘物,将栅极与其它两个电极隔开,所以电流能较 Nippon Electric Company has developed a high-speed GaAs FET, the switching speed of at least twice as fast than the normal FET, mutual conductivity of 602mS / mm ~ 2, magnification is three times the existing FET. The center electrode of this device is made of GaAs substrate to reduce the impedance. The center electrode is a self-aligned gate structure. There is a silicon oxide insulator on the wall of the tungsten silicide gate separating the gate from the other two electrodes so that the current can be more