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使用光发射谱(OES)对甚高频等离子增强化学气相沉积(VHF-PECVD)技术沉积硅薄膜时的等离子体发光基团的空间分布进行了在线监测和研究.研究表明:等离子体的不同发光基团都存在着一个中间强度较大的区域和两边电极附近的暗区;增大硅烷浓度和提高辉光功率都会增大SiH*峰强度;硼烷的加入,使得SiH*和Hα*峰强度增大,但硼烷流量变化的影响很小;硼烷流量增大,材料的晶化率下降,而I[Hα*]/I[SiH*]值却上升;当硅烷浓度改变时,空间各个区域内的I[Hα*]/I[SiH*]值的变化规律不同;而改变辉光功率或改变硼烷流量的情况下,空间各个点的I*/I*值变化规律都是相同的.
The spatial distribution of plasma luminescent groups in the deposition of silicon thin films by VHF-PECVD was monitored and studied by using optical emission spectroscopy (OES). The results show that different luminescences of plasmas There is a region with a higher intensity in the middle region and dark regions near the electrodes on both sides. Increasing the concentration of silane and increasing the power of glow increase the peak intensity of SiH *; the addition of borane makes the peak intensities of SiH * and Hα * But the rate of I [Hα *] / I [SiH *] increased. When the concentration of silane changed, the space of each The change rule of I [Hα *] / I [SiH *] in the region is different; while the change of the glow power or the change of the borane flow rate, the change rule of I * / I * value at each point in space is the same .