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采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术制备了不同腔室环境下的微晶硅薄膜.对单室沉积掺杂层p材料后遗留在腔室中的硼对本征微晶i材料电学特性和结构特性的影响进行了详细研究.测试结果表明:单室沉积p层后的硼降低了微晶i层材料的暗电导,增加了材料的光敏性;由于硼对i层污染程度的不同,使得材料的激活能发生了变化;腔室中残余的硼也导致微晶硅薄膜的结晶状况恶化,同时弱化了材料的(220)择优取向.而在较高功率和较强氢稀释下制备的晶化率较高,(220)晶向明显择优的材料受硼污染影响相对减小.
The microcrystalline silicon films in different chamber environments were prepared by VHF-PECVD technique. The effect of boron left in the chamber on the deposition of the doped p-layer material on the intrinsic microcrystals i material has been studied in detail.Experimental results show that boron deposited in the single chamber decreases the dark conductance of the microcrystalline i-layer material and increases the photosensitivity of the material. Due to the contamination of the i-layer by boron, The residual boron in the chamber also leads to the deterioration of the crystalline state of the microcrystalline silicon thin film and weakens the preferred orientation of the material (220), while at higher power and higher hydrogen The crystallization rate prepared by dilution is higher, and the material with obvious (220) crystal orientation is relatively less affected by boron contamination.