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An ion beam analysis system was established on a 1.7 MV tandem accelerator, enabling Rutherford backscattering(RBS), elastic recoil detection(ERD), nuclear reaction analysis(NRA) and channeling measurements. The system was tested by performing qualitative and quantitative analysis of Si, Ni/Si, Bi Fe O3:La/Si,Mo C/Mo/Si and Ti BN/Si samples. RBS of a Bi Fe O3:La film was used as system calibration. Tested by ion beam channeling, a Si(100) is of good crystallinity(χmin= 3.01%). For thin film samples, the measured thickness agrees well with simulation results by SIMNRA. In particular, composition of a Mo C/Mo/Si and Ti BN film samples were analyzed by RBS and non-Rutherford elastic backscattering.
An ion beam analysis system was established on a 1.7 MV tandem accelerator, enabling Rutherford backscattering (RBS), elastic recoil detection (ERD), nuclear reaction analysis (NRA) and channeling measurements. The system was tested by performing qualitative and quantitative analysis of Si , Ni / Si, BiFeO3: La / Si, MoC / Mo / Si and TiBN / Si samples. RBS of aBiFeO3: La film was used as a system calibration. Tested by ion beam channeling, a Si ( 100) is of good crystallinity (χ min = 3.01%). For thin film samples, the measured thickness agrees well with simulation results by SIMNRA. In particular, composition of a Mo C / Mo / Si and Ti BN film samples analyzed by RBS and non-Rutherford elastic backscattering.