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本文报道了中国科学院电子学研究所在S波段宽频带高功率多注速调管方面的研究进展。该多注速调管峰值功率500 kW,平均功率30 kW,瞬时相对带宽为10%,是电子所目前宽带多注速调管中平均功率最大的一种管型。最大的挑战为实现宽频带的同时在高平均功率工作状态下保障强流电子注的聚焦和传输,减少高频状态下的电子注截获。目前研制出了两只样管,采用基模工作模式,24个电子注,注电压为29 kV,注电流50 A。经过测试,在10%的相对带宽内,效率大于40%,输出增益大于37.5 dB,本文将介绍相关的仿真结果和热测结果。
This paper reports the research progress of the Institute of Electronics, Chinese Academy of Sciences in the wide band S-band high power multi-injection klystron. The multi-injection klystron tube has a peak power of 500 kW, an average power of 30 kW and an instantaneous relative bandwidth of 10%. It is a type of tube with the largest average power in the wideband multi-injection klystron of the Institute of Electronics. The biggest challenge for the realization of a wide band at the same time under the condition of high average power to ensure the strong electron injection focus and transmission, reducing the electronic injection under high frequency interception. At present, two sample tubes have been developed, using a basic mode of operation, 24 electron injection, injection voltage of 29 kV, injection current of 50 A. Tested, the efficiency is greater than 40% at 10% relative bandwidth, and the output gain is greater than 37.5 dB. This article presents the related simulation and thermal measurements.