在传统硅基器件日益趋近物理极限的背景下,石墨烯场效应管作为一种新型纳米器件受到了广泛关注。以漂移-扩散传输理论为基础,得到了石墨烯场效应管的漏电流解析表达式,并以此建立了适合电路设计的石墨烯场效应管Verilog-A模型。利用该模型对栅长为10μm、沟道宽度为5μm的石墨烯场效应管进行HSPICE仿真,仿真结果与实验所测数据相符。在此基础上,给出了基于石墨烯场效应管的共源放大电路、共漏放大电路和共栅放大电路三种基本电路组态的仿真结果,表明石墨烯场效应管应用于模拟及RF电路具有广阔的前景。 In the context of the traditional silicon-based devices getting closer to the physical limit, graphene FETs have drawn much attention as a new type of nano-device. Based on the theory of drift-diffusion transmission, the analytical expression of leakage current in graphene FETs is obtained, and a Verilog-A model of graphene FETs is established. By using this model, HSPICE simulation was performed on a graphene FET with a gate length of 10μm and a channel width of 5μm. The simulation results are consistent with the experimental data. On this basis, the simulation results of the three basic circuit configurations of common source amplifier, common drain amplifier and common-gate amplifier based on graphene FET are given. The results show that the graphene FET is used in analog and RF Circuit has broad prospects.