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用 X射线光电子能谱对 MOCVD生长的未故意掺杂 Ga N单晶薄膜进行 N、 Ga组份测试 ,同时用 RBS/Channeling、 Hall测量和光致发光技术对样品进行结晶品质及光电性能研究 .结果表明 N含量相对低的 Ga N薄膜 ,其背景载流子浓度较高 ,离子束背散射沟道最小产额比 χmin较小 ,带边辐射复合跃迁较强 .在 N含量相对低的 Ga N薄膜中易形成 N空位 ,N空位是导致未故意掺杂的 Ga N单晶薄膜呈现 n型电导的主要原因 ;N空位本身对离子束沟道产额没有贡献 ,但它能弛豫 Ga N与 Al2 O3之间的晶格失配 ,改善生长的 Ga N薄膜的结晶品质
X-ray photoelectron spectroscopy (XPS) was used to test the unintentionally doped GaN single crystal films grown by MOCVD for the N and Ga components. The RBS / Channeling, Hall measurement and photoluminescence were used to study the crystal quality and the photoelectric properties of the samples. It is shown that the Ga N thin film with relatively low N content has a higher background carrier concentration and a smaller minimum yield ratio χmin of the ion beam backscattering channel and a strong radiative recombination transition at the edge of the Ga N thin film N vacancy easily forms. N vacancy is the main reason for the n-type conductivity of unintentionally doped GaN single crystal thin film. N vacancy itself does not contribute to the ion beam channel yield, but it can relax GaN and Al2 O3 lattice mismatch, improve the growth of GaN film crystallization quality