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采用甚高频等离子体增强化学气相沉积(VHF PECVD)方法,在保持其它参量不变的条件下,通过改变SiH4浓度(SC)成功地制备了一系列Si基薄膜样品。对材料特性的测试结果表明,同射频PECVD相比VHF PECVD技术提高了薄膜的沉积速率,并且SC大相应的沉积速率也大;微区Raman谱测试计算结果表明,样品的晶化率(Xc)随SC的逐渐增大而减小;X射线衍射(XRD)测试结果计算显示,样品的晶粒尺寸在20～30nm之间原子力显微镜(AFM)和微区Raman谱测试分析结果一致表明,过渡区在SC在6%～8%之间;激活能测试结果表明,制备出接近本征的微晶Si材料。
A series of Si-based thin film samples were successfully prepared by changing the SiH4 concentration (SC) with VHF PECVD method under the condition of keeping other parameters unchanged. The results of the material properties show that compared with the radio frequency PECVD, the VHF PECVD technology improves the deposition rate of the film and the corresponding deposition rate of the SC is also large. The calculation results of the Raman spectrum of the micro-region show that the crystallization rate (Xc) X-ray diffraction (XRD) test results show that the sample size between 20 ~ 30nm atomic force microscopy (AFM) and micro-area Raman spectroscopy test results show that the transition zone The SC is between 6% and 8%. The results of activation energy tests show that the microcrystalline Si material is close to intrinsic.