论文部分内容阅读
提出了一种带高压电平位移电路的H桥高端功率管栅极驱动电路。电平位移电路采用脉冲下拉方式实现高压电平位移,与一般的方波下拉方式相比,有效地减小了电路的功耗。分析了脉冲下拉方式电平位移电路的工作原理与实现方式,以此为基础,设计了H桥高端驱动电路。基于5μm高压BCD工艺,采用Spectres进行电路仿真,完成了电路版图设计和流片测试。结果显示,设计的高端驱动电路能很好地实现高端功率管栅极电位的悬浮抬升。
A high-end H-bridge power MOSFET gate drive circuit with high voltage level shift circuit is proposed. The level shift circuit adopts the pulse pull-down method to realize high-voltage level shift, and effectively reduces the power consumption of the circuit compared with the general square wave pull-down method. The working principle and implementation of the pulse pull - down level shift circuit are analyzed. Based on this, the H bridge high side driver circuit is designed. Based on the 5μm high-voltage BCD process, Spectres was used to simulate the circuit, and the circuit layout design and chip test were completed. The results show that the design of high-end driver circuit can well achieve the high-end power tube gate potential floating lift.