本文研究了不同重复频率的飞秒激光脉冲照射下Si基光伏型探测器的输出特性。不同负载情况下该类探测器的输出特性也进行了研究。实验表明，不同重复频率飞秒脉冲入射下，存在反向偏压的PIN探测器线性区最大。在高重频飞秒激光入射条件下，外加反向偏压的PN探测器灵敏度要远高于未加反向偏压的情况。PN探测器响应速度较慢是该类探测器存在饱和现象的主要原因。“,”Output properties of Si based photovoltaic detectors were researched applying femtosecond pulses with different repetition rates. The output properties of these detectors with different load conditions were also researched. The linear response domain of PIN detector with external reverse bias voltage was found quite large for different femtosecond pulses repetition rates. The sensitivity of PN detector was found much higher when applying external reverse bias voltage with femtosecond repetition rate 76 MHz. The saturation effect of PN detector was attributed to the slow response speed of the photovoltaic detector.