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由于具有高探测率、高可靠性以及可室温工作等特点,InGaAs红外探测器在航天遥感领域具有重要的应用,而平面型的InGaAs红外探测器是国际主流的结构,但是国内这一方面的研究却刚刚起步,文中通过闭管锌扩散方式制备了平面型In0.53Ga0.47As红外探测器八元线列,测试了器件的伏安特性,得到器件的暗电流在零偏压下平均值为6.5pA,-500mV下为18.2pA,并且通过对器件信号、噪声以及响应光谱的测试得到器件的峰值响应率,其平均值为8.11×1011cm·Hz1/2·W-1,不均匀性为4.69%。通过器件的优值因子R0A计算了器件理论峰值响应率,结果表明:理论峰值响应率平均值高于测试值,且不均匀性较大。通过拟合器件的伏安曲线分析了器件峰值响应率与理论值的差别。
Due to its high detection rate, high reliability and workability at room temperature, InGaAs infrared detectors have important applications in the field of space remote sensing. The planar InGaAs infrared detectors are the mainstream structure in the world, but the domestic research in this area But has just started. In this paper, eight-element linear arrays of in-plane In0.53Ga0.47As infrared detectors were fabricated by closed-tube zinc diffusion. The device’s volt-ampere characteristics were tested. The dark current of the devices was averaged at zero bias pA, 18.2pA at -500mV, and the peak responsivity of the device was obtained by testing the device signal, noise and response spectrum with an average of 8.11 × 1011cm · Hz1 / 2 · W-1 and an inhomogeneity of 4.69% . The theoretical peak response rate of the device was calculated by the figure of merit R0A of the device. The results show that the average of the theoretical peak response rate is higher than the test value, and the nonuniformity is large. The difference between the device peak response and the theoretical value was analyzed by fitting the voltammetry curve of the device.