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利用电子束光刻和各向异性湿法腐蚀技术,在(100)SOI衬底上成功地制备出晶面依赖的硅纳米结构.这项技术利用了硅的不同晶面在碱性腐蚀溶液中具有不同腐蚀速率的特性.纳米结构脊部宽度的最小尺寸可以达到10nm以下.扫描电镜和原子力显微镜的观察表明,利用这种方法制备出来的纳米结构具有很好的重复性,而且表面光滑.
Surface-dependent silicon nanostructures have been successfully fabricated on (100) SOI substrates by electron beam lithography and anisotropic wet etching techniques, which utilize different crystal planes of silicon in an alkaline etching solution With different corrosion rate.The minimum width of the nanostructures ridge can reach 10nm.The observation of SEM and AFM shows that the nanostructures prepared by this method have good repeatability and smooth surface.