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由于石英晶体的刻蚀速率小,要实现石英晶体的高深宽比刻蚀,常用的光刻胶或金属掩膜不能满足工艺要求。提出使用双重掩蔽层的方法实现石英晶体的高深宽比刻蚀,即石英晶体和单晶硅键合,然后在单晶硅表面生长二氧化硅,二氧化硅作为刻蚀单晶硅的掩蔽层,单晶硅作为刻蚀石英晶体的掩蔽层。ICP刻蚀过程使用SF6作为刻蚀气体、C4H8作为钝化气体、He作为冷却气体。控制好气体的流量和配比,选择合适的射频功率,能刻蚀出深度为30μm,宽度为50μm的深槽。该工艺对开发新型石英晶体器件有积极的意义。
Due to the small etching rate of quartz crystal, to achieve high aspect ratio etching of quartz crystal, the commonly used photoresist or metal mask can not meet the process requirements. Proposed the use of double masking layer method to achieve high aspect ratio quartz crystal etching, that is, quartz crystal and single crystal silicon bonding, and then grow in the silicon surface of silicon dioxide, silicon dioxide as masking layer etching monocrystalline silicon , Monocrystalline silicon as a mask of quartz crystal etching. The ICP etching process uses SF6 as the etching gas, C4H8 as the passivation gas, and He as the cooling gas. Control the gas flow rate and the ratio, select the appropriate RF power, can be etched to a depth of 30μm, a width of 50μm deep groove. This process has a positive meaning for the development of new quartz crystal devices.