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总结了氧化锌基TFT稳定性的最新研究进展,分析了栅偏压、栅绝缘层和背沟道影响TFT稳定性,尤其是阈值电压稳定性的主导机制。结果表明,氧化锌基TFT的不稳定性主要取决于陷阱缺陷态对可动载流子的俘获作用,以及新陷阱态的产生。总结了提高氧化锌基TFT稳定性的三种途径:降低栅偏压;提高沟道/栅绝缘层界面质量,降低缺陷态密度;钝化保护背沟道。
The recent research progress on the stability of zinc oxide (TFT) based TFTs is summarized. The main mechanism of the gate bias, the gate insulating layer and the back channel on the stability of the TFTs, especially the threshold voltage stability are analyzed. The results show that the instability of zinc oxide based TFTs mainly depends on trapped traps of trapped defect states and the generation of new trap states. Three ways to improve the stability of zinc oxide based TFTs are summarized: reducing the gate bias voltage; improving the quality of the channel / gate insulator interface and reducing the defect density; and protecting the back channel by passivation.