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采用射频反应磁控溅射方法在硅衬底制备了HfSixOy薄膜,用X射线光电子能谱(XPS)分析了HfSixOy薄膜的成分,用X射线衍射(XRD)检测了薄膜的结构,并用椭圆偏振光谱仪研究了退火处理对薄膜光学性质的影响。XRD谱显示,HfSixOy薄膜经700℃高温退火处理后仍为非晶态,而在900℃高温退火处理后出现晶化。采用Tauc-Lorentz(TL)色散模型对测试得到的曲线进行拟合并分析得出薄膜的光学常数,结果表明,薄膜的折射率随退火温度的升高而增加,而消光系数随退火温度的升高呈降低趋势。薄膜的光学带隙随着退火温度的升高增加,采用外推法得到薄膜沉积态和经500℃,700℃,900℃退火后的带隙分别为5.62,5.65,5.68,5.98eV。
The composition of HfSixOy thin films was analyzed by X-ray photoelectron spectroscopy (XPS). The structure of HfSixOy thin films was examined by X-ray diffraction (XRD). The films were characterized by ellipsometry The effect of annealing treatment on the optical properties of the films was investigated. XRD patterns show that the HfSixOy films are still amorphous after annealing at 700 ℃ and crystallized after annealing at 900 ℃. The Tauc-Lorentz (TL) dispersion model was used to fit and analyze the obtained curves. The optical constants of the films were obtained. The results show that the refractive index of the films increases with the annealing temperature, while the extinction coefficient increases with the annealing temperature Gao Cheng to reduce the trend. The optical bandgap of the films increases with the increase of the annealing temperature. The film deposited state and the bandgap after annealed at 500 ℃, 700 ℃ and 900 ℃ are extrapolated to 5.62, 5.65, 5.68 and 5.98 eV, respectively.