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一、引言 随着MOS集成电路向短沟道、高速化发展,MOS晶体管电容对电路性能的影响更为突出。对电路性能影响较大的栅—漏,栅—源本征电容C_(GD),C_(GS)与长沟器件的主要不同是:(1)饱和区C_(GD)≠0,随着沟道缩短,C_(GD)占总本征栅电容的比例增大。(2)C_(GD)由饱和区到线性区呈平缓过渡状。(3)饱和区C_(GS)减小,并由次开启到饱和区的上升趋势变缓。分析表明,栅电容的短沟效应与沟长调制和速度饱和迁移率有关。
I. INTRODUCTION With the development of MOS integrated circuits to short channels and high speed, the influence of MOS transistor capacitance on the circuit performance is even more prominent. The major differences between gate-drain and gate-source intrinsic capacitances C_ (GD), C_ (GS) and long trench devices, which have a great influence on the circuit performance, are: (1) saturation area C_ Road shortening, C_ (GD) in the proportion of the total intrinsic gate capacitance increases. (2) C_ (GD) showed a gentle transition from the saturated zone to the linear zone. (3) C_ (GS) in the saturated zone decreases and the rising trend from the next opening to the saturation zone decreases. The analysis shows that the short-channel effect of gate capacitance is related to the groove length modulation and velocity-saturated mobility.