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采用磁控溅射法在单晶硅基片上制备铝膜,并结合光刻技术将擒纵机构图形转移到铝膜。利用铝膜不与刻蚀气体反应的特性,将其取代光刻胶作为深度等离子体反应刻蚀制备擒纵机构时硅基片的掩蔽层,并且采用干氧的方法在擒纵机构表面生成一层SiO2薄膜。详细研究了深度等离子体反应刻蚀的刻蚀宽度对擒纵机构的影响,并对擒纵机构表面进行了详细的SEM分析和EDS能谱分析。研究结果表明,采用铝膜作为掩蔽层能够对擒纵机构的表面和断面起到很好的保护作用,擒纵机构获得优良的表面质量,且在刻蚀窗口宽度为75μm时,获得最优的擒纵机构零件。
The aluminum film is prepared on the monocrystalline silicon substrate by magnetron sputtering and the escapement pattern is transferred to the aluminum film in combination with photolithography. Using the characteristic that the aluminum film does not react with the etching gas, the aluminum film is used as a masking layer for etching the silicon substrate during the preparation of the escapement by performing deep plasma etching, and the method of using dry oxygen generates a Layer SiO2 film. The influence of etching width on the escapement by deep plasma reactive etching was studied in detail. The surface of the escapement was analyzed by SEM and EDS. The results show that the use of aluminum as a masking layer can escape the escapement surface and cross section play a good protective effect, escapement to obtain excellent surface quality, and the width of the etching window is 75μm, the best Escapement parts.