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利用直流磁控溅射制得非晶态氮化碳膜，然后在高温下、常压Ｎ 气氛中进行热处理，利用ＤＴＡ，ＸＲＤ 和Ａｕｇｅｒ研究晶化前后氮化碳成分、结构以及键态的变化．实验结果表明：在１１８６ ℃附近出现了晶化现象，高温晶化处理可以促进无定形氮化碳向晶态转变，在ＸＲＤ图谱上出现αＣ３Ｎ４ 衍射峰．Ａｕｇｅｒ 实验结果表明膜中出现富Ｃ，Ｓｉ，Ｎ 的区域
The amorphous carbonitride films were obtained by direct current magnetron sputtering, and then were heat treated at high temperature under normal pressure in N atmosphere. The composition, structure and bond state of carbon nitride before and after crystallization were studied by DTA, XRD and Auger . The experimental results show that the crystallization phenomenon occurs near 1186 ℃. The high temperature crystallization can promote the transition from amorphous carbon nitride to the crystalline phase, and the α-C3N4 diffraction peak appears on the XRD pattern. Auger experimental results show that the film appears C, Si, N-rich areas