室温下,通过采用直流反应磁控溅射法在覆盖有氮化硅薄膜的单晶硅衬底上生长了厚度约为100nm的氧化钛薄膜。掠入射X射线衍射分析结果表明在室温下,不同氧分压下生长的氧化钛薄膜均具有非晶结构。分别采用场发射扫描电子显微镜、X射线光电子能谱对薄膜的表面和断面形貌以及薄膜的组分进行了分析和表征。对薄膜的电学特性测试发现非晶氧化钛薄膜在293～373K的温度范围内主要依靠热激发至扩展态中的电子导电。 At room temperature, a titanium oxide film having a thickness of about 100 nm was grown on a monocrystalline silicon substrate covered with a silicon nitride film by using a DC reactive magnetron sputtering method. Grazing incidence X-ray diffraction analysis results show that at room temperature, titanium oxide films grown under different oxygen partial pressures have an amorphous structure. Field emission scanning electron microscopy and X-ray photoelectron spectroscopy were used to analyze and characterize the surface and cross-sectional morphology of the film and the composition of the film. The electrical properties of the film test found that amorphous titanium oxide film in the temperature range of 293 ~ 373K relies mainly on thermal excitation to the electronic conductivity in the extended state.