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本文介绍美国雷神视觉系统(RVS)公司和AVYD器件公司在提高红外探测器性能方面所获得的成果。这两家公司联合验证了一些具有高可操作性和高性能的甚大规格成像焦平面列阵,它们将在未来的近红外和短波红外成像应用中发挥应有的潜能。这种探测器的设计理念可能会使像元间距小到5μm的大规格焦平面列阵达到衍射限分辨率。本文报导雷神视觉系统公司的先进样品制造厂把该公司的Hg_(1-x)Cd_xTe材料生长和探测器操作工艺方法与AVYD公司的p型离子注入方法结合起来在制作平面探测器列阵晶片方面所做的工作。同时综述像元间距为20μm的1024×1024元短波红外焦平面列阵的性能。这种探测器列阵是用响应波段为从近红外至2.5μm截止波长的Hg_(1-x)Cd_xTe材料制作的。通过柱状焊接互连技术,探测器列阵与雷神视觉系统公司的天文学级读出电路片焊接在一起。这些焦平面列阵在整个光谱范围内呈现出极佳的量子效率和均匀性,并呈现出中值为每秒0.25个电子的甚低漏泄电流。用来制作探测器列阵的工程级Hg_(1-x)Cd_xTe外延层是用经过改进的液相外延方法在CdZnTe衬底上生长的,并经过了复合的钝化/离子注入/钝化处理。本文详细评论探测器的性能数据,其中包括测试结构的电流-电压特性曲线、截止光谱曲线、焦平面列阵的量子效率和漏泄电流。
This article describes the results achieved by Raytheon Vision Systems (RVS) and AVYD Devices in improving the performance of infrared detectors. The two companies have jointly validated a number of very large imaging focal plane arrays with high operability and high performance that will deliver their potential for future NIR and SWIR imaging applications. This detector design concept may result in diffraction limited resolution of large-scale focal plane arrays with pixel pitches as small as 5 μm. This article reports that Raytheon Vision Systems’ advanced sample fabrication facility combined the company’s Hg_ (1-x) Cd_xTe material growth and detector processing techniques with AVYD’s p-type ion implantation method for the fabrication of planar detector array wafers Work done At the same time, the performance of 1024 × 1024 element short-wave infrared focal plane array with pixel spacing of 20 μm is reviewed. This detector array is made of Hg 1-x Cd x Te material with a response band of near-infrared to 2.5 μm cut-off wavelength. Through the cylindrical welding interconnect technology, the detector array and Raytheon Vision Systems astronomical readout circuit chip welding together. These focal plane arrays exhibit excellent quantum efficiency and uniformity over the entire spectral range and exhibit very low leakage currents with a median of 0.25 electrons per second. The engineering grade Hg_ (1-x) Cd_xTe epitaxial layer used to fabricate detector arrays was grown on a CdZnTe substrate by a modified liquid-phase epitaxy method and was subjected to complex passivation / ion implantation / passivation . This article reviews in detail the detector performance data, including the current-voltage characteristics of the test structure, the cut-off spectral curve, the quantum efficiency of the focal plane array, and the leakage current.