本文介绍了用质子轰击产生 n-型层来制备锑化铟 n-P 结光伏探测器的方法。在77°K 时,直径为20密耳的二极管具有几十万欧姆的零偏压电阻。这些二极管在4.9微米时的典型峰值探测度在2π,300°K 背景条件下大于3×10~(10)厘米赫~(1/2)/瓦,所观察到的最大值是10~(11)厘米赫~(1/2)/瓦。已观察到接近35％的二极管量子效率。 This article describes a method for preparing an indium antimonide n-P junction photodetector by proton bombardment of an n-type layer. Diodes of 20 mils in diameter have hundreds of ohms of zero bias at 77 ° K. The typical peak detection of these diodes at 4.9 microns is greater than 3 x 10 ~ (10) centimeters ~ (1/2) watts at 2π, 300 ° K background and the observed maximum is 10 ~ (11) Cm centimeters ~ (1/2) / watt. Nearly 35% of the diode quantum efficiency has been observed.