本文从理论和实验上证明了数片硅同时自停止腐蚀的可行性。结果表明:KOH溶液非常适用于该技术;当几片硅同时进行电化学腐蚀时不会互相影响;而且当它们的开路电位(OCP)、钝化电位(PP)以及各片硅腐蚀完成的时间均有差别时,都能有效地实现自停止。实验以4片硅同时自停止腐蚀为例,最后所得的4片硅膜厚相差不到1μm。 This paper proves theoretically and experimentally that a few slices of silicon can stop corrosion at the same time. The results show that the KOH solution is very suitable for this technology. When several silicon are electrochemically etched at the same time, they do not affect each other. When their open circuit potential (OCP), passivation potential (PP) All have differences, can effectively achieve self-stop. In the experiment, 4 pieces of silicon were stopped and eroded at the same time as an example, and the resulting 4 pieces of silicon film had a difference of less than 1 μm.