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一、引言随着长波长光纤通信的迅速发展,InGaAsP/InP双异质结发光器件和探测器件已被人们所重视。Zn向InP中的扩散技术,对InGaAsP/InP光源和探测器件的制备是有重要影响的工艺。近年来已有许多研究。为了制备InGaAsP/InP双异质结发光管的需要,我们研究了InP中Zn的低温扩散技术。本文报导的低温双温区扩散工艺,可得到表面光亮,Zn浓度分布均匀,重复性好,无损伤的高浓度表面层。讨论了Zn在InP中扩散时的行为,解释了扩散过程中的异常现象。
I. INTRODUCTION With the rapid development of long wavelength optical fiber communication, InGaAsP / InP double heterostructure light emitting devices and detection devices have been valued by people. The diffusion of Zn into InP is an important process for the preparation of InGaAsP / InP light sources and detection devices. There have been many studies in recent years. In order to prepare the InGaAsP / InP double heterostructure LED, we studied the low temperature diffusion of Zn in InP. The low temperature and dual temperature zone diffusion process reported in this paper can obtain high concentration surface layer with bright surface, uniform Zn concentration distribution, good repeatability and no damage. The behavior of Zn during diffusion in InP was discussed, and the anomalies in the diffusion process were explained.