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采用真空电子束蒸镀的方法制备氧化铟锡(ITO)薄膜,以此作为AlGaInP红光发光二极管(LED)的电流扩展层。研究了该LED结构中,不同的芯粒尺寸对ITO电流扩展的影响。结果表明,在电极尺寸一定的情况下,随着芯粒尺寸的变大,ITO电流扩展层对芯粒发光强度的变化起到显著的效果;在电极直径大小为90μm,芯粒尺寸为190μm×190μm时,电流扩展效果最优,亮度增加18.80%,而当芯粒尺寸增大到220μm×220μm时,亮度增加17.01%,其相对电流扩展效果下降。选取适当芯粒尺寸对ITO的电流扩展至关重要。
An indium tin oxide (ITO) thin film was prepared by vacuum electron beam evaporation as a current spreading layer of an AlGaInP red light emitting diode (LED). The effects of different core sizes on the ITO current spreading in this LED structure were investigated. The results show that the ITO current spreading layer has a significant effect on the luminescence intensity of the core as the size of the core increases with the increase of the size of the core. When the diameter of the electrode is 90μm and the size of the core is 190μm × When the core size increases to 220μm × 220μm, the brightness increases by 17.01%, and the relative current spreading effect decreases. Choosing the appropriate core size is crucial for the current scaling of ITO.