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采用外置式电容耦合低压等离子化学气相沉积法制备非晶CHN薄膜。X射线光电子能谱仪分析表明薄膜表面C、N和O的相对含量比,同时随着N2/CH4比例增大,薄膜中N元素的含量逐渐增加;并且对薄膜中存在的C-N共价键进行了讨论;傅里叶红外透射光谱分析表明薄膜中存在C-N键和其他官能团;拉曼光谱分析表明随着N2/CH4比例增大,D峰和G峰的中心位置先远离然后靠近,并且D峰和G峰的面积比逐渐增加,源于薄膜无序度增加且逐渐趋于石墨化。
Amorphous CHN thin films were prepared by external capacitive coupling low pressure plasma chemical vapor deposition. X-ray photoelectron spectroscopy analysis showed that the relative content ratio of C, N and O on the surface of the film, and with the increase of N2 / CH4 ratio, the content of N element in the film gradually increased; and the CN covalent bond present in the film The Fourier transform infrared spectroscopy (FTIR) analysis showed that CN bonds and other functional groups exist in the film. Raman spectroscopy analysis showed that the center of D peak and G peak were far away from and then approached with the increase of N2 / CH4 ratio, and D peak And G peak area ratio gradually increased, from the film disorder increases and gradually tends to graphitization.