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用直流磁控溅射法在玻璃衬底上成功制备出了钛镓共掺杂氧化锌(GZO:Ti)透明导电薄膜,研究了溅射压强和功率对GZO:Ti薄膜的微观结构和光电性能的影响。研究结果表明,所制备的GZO:Ti薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。溅射压强和功率对薄膜的电阻率和微观结构均有显著影响。随功率增大,薄膜电阻率降低,生长率增大。所制备的薄膜的最小电阻率为1.81×10-4Ω·cm,可见光区平均透过率大于84%。
The transparent conductive films of titanium gallium co-doped zinc oxide (GZO: Ti) were successfully prepared on glass substrate by DC magnetron sputtering. The effects of sputtering pressure and power on the microstructure and optical properties of GZO: Ti thin films Impact. The results show that the prepared GZO: Ti film is hexagonal wurtzite polycrystalline thin film, and has a preferred c-axis orientation. The sputtering pressure and power have a significant effect on the resistivity and microstructure of the films. With the increase of power, the resistivity of the film decreases and the growth rate increases. The prepared thin film has a minimum resistivity of 1.81 × 10 -4 Ω · cm and an average transmittance in the visible region of more than 84%.