论文部分内容阅读
采用给 PECVD Si O2 中注入氮的方法 ,形成一薄层氮氧化硅 ,以此作为一种新型的扩散阻挡层 .不同热偏压条件下的 C- V测试结果和 XPS分析结果表明 ,该方法能起到对铜扩散的有效阻挡作用
A new type of diffusion barrier was formed by injecting nitrogen into PECVD Si O2 to form a thin layer of silicon oxynitride.The results of C-V and XPS under different hot bias conditions show that this method Can play an effective barrier to the proliferation of copper