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碲铟汞Hg3In2Te6是(In2Te3)x-(Hg3Te3)1-x(x=0.5)的化合物,被称为缺陷相化合物。为了研究In/HgInTe欧姆接触特性,首先运用热电子蒸发技术在单晶Hg3In2Te6表面形成了In/Hg3In2Te6接触,运用传输线模型(TLC)对In/Hg3In2Te6欧姆接触特性进行了分析,结果表明:In/Hg3In2Te6形成了欧姆接触,接触电阻率为6.71×10-2Ω·cm2,粘附性好,电极质量理想,满足于欧姆电极性质的要求。并在此基础上对Hg3In2Te6材料的电学性能运用范德堡方法进行了测试,测试结果表明:Hg3In2Te6单晶在室温下的导电类型为n型,电阻率为6.16×102Ω·cm,载流子浓度为2.888×1013cm-3,载流子迁移率为350cm2/(V·s)。实验表明:该样品载流子浓度降低后,漏电流减小,探测器的噪声降低,从而探测器的能量分辨率得到了提高。
Indium Hg3In2Te6 is a compound of (In2Te3) x- (Hg3Te3) 1-x (x = 0.5), which is called a defect phase compound. In order to study the ohmic contact characteristics of In / HgInTe, the In / Hg3In2Te6 contact was first formed on the surface of single crystal Hg3In2Te6 by using the thermionic evaporation technique. The ohmic contact characteristics of In / Hg3In2Te6 were analyzed by transmission line model (TLC). The results show that the In / Hg3In2Te6 The formation of ohmic contact, the contact resistance of 6.71 × 10-2Ω · cm2, good adhesion, electrode quality ideal to meet the requirements of the ohmic electrode properties. The electrical properties of Hg3In2Te6materials were tested by the method of Vanderbilt. The results show that the conductivity type of Hg3In2Te6 single crystal is n type at room temperature, the resistivity is 6.16 × 102Ω · cm, the carrier concentration Was 2.888 × 10 13 cm -3, and the carrier mobility was 350 cm 2 / (V · s). Experimental results show that the leakage current decreases and the noise of the detector decreases when the carrier concentration decreases. As a result, the energy resolution of the detector is improved.