论文部分内容阅读
采用离子注入技术对近距离升华制备的CdTe薄膜进行Er3+掺杂研究.讨论了不同掺Er3+浓度对CdTe薄膜的结构和光电性能的影响.利用X射线衍射仪、扫描电子显微镜、紫外-可见分光光度计、霍耳效应测试系统和复阻抗分析仪对样品进行测试.结果表明,适当的掺杂量可以改善CdTe薄膜的结晶性能,降低晶界势垒高度,提高其导电性能.在一定掺杂范围内掺Er3+对CdTe薄膜的光能隙影响不大.
The ion implantation technology was used to investigate the Er3 + doping of CdTe thin films prepared by near distance sublimation. The effects of different Er3 + concentration on the structure and photoelectric properties of CdTe films were investigated by X-ray diffractometry, scanning electron microscopy, UV-visible spectrophotometry Meter, Hall effect test system and complex impedance analyzer.The results show that the appropriate doping amount can improve the crystalline properties of CdTe thin films, reduce the barrier height of the grain boundary and improve the electrical conductivity of the CdTe thin films.In a certain doping range The doped Er3 + has little effect on the optical energy gap of CdTe films.