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用H3PO4：H2O2系和HCl系腐蚀液实现了InP对InGaAs、InGaAs对InP的湿法化学选择腐蚀，并将其应用于InP/InGaAsHBT制作，发射极面积为10μm×20μm的单管共发射极直流增益β为70，截止频率Ft和最大振荡频率Fmax分别为11GHz和12GHz.
The wet chemical selective etching of InP to InP and InGaAs to InP by InP / InGaAs HBT was achieved by using H3P04: H2O2 and HCl as etching solution. The single-tube common emitter DC with an emitter area of 10μm × 20μm The gain β is 70, the cutoff frequency Ft and the maximum oscillation frequency Fmax are 11 GHz and 12 GHz, respectively.