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报道了一个含总剂量辐照效应的 SOI MOSFET统一模型 .该模型能自动计入体耗尽条件 ,不需要分类考虑不同膜厚时的情况 .模型计算结果与实验吻合较好 .该模型物理意义明确 ,参数提取方便 ,适合于抗辐照 SOI器件与电路的模拟 .
A unified model of SOI MOSFET with total dose radiation effect is reported, which can automatically calculate the depletion condition of the body and does not need to be classified into consideration when the film thickness is different. The calculated results are in good agreement with the experiment. The physical meaning of the model Clear, easy to extract parameters, suitable for anti-radiation SOI devices and circuits simulation.