设计了具有高量子效率的发光二极管(LED)芯片。通过采用Mg掺杂的AlInN-InGaN-AlInN作为LED的电子阻挡层,减小由极化引起的静电场,增大电子和空穴波函数的交叠比,从而增大了辐射复合速率。提高辐射复合速率有利于缓解电子泄露问题,增加了LED的发光功率,减小LED在大电流下的效率下降问题。新设计的芯片在大电流注入下,发光功率是传统结构的两倍。 A light-emitting diode (LED) chip with high quantum efficiency has been designed. By using Mg-doped AlInN-InGaN-AlInN as the electron blocking layer of the LED, the polarization-induced electrostatic field is reduced and the overlap ratio of electron and hole wavefunctions is increased, thereby increasing the radiation recombination rate. Increasing the radiation recombination rate is conducive to alleviating the problem of electronic leakage, increasing the luminous power of the LED and reducing the problem of the LED’s decreasing efficiency under high current. The new design of the chip at high current injection, the luminous power is twice the traditional structure.